Semiconductor material of light emitting element provided with distorted active layer
文献类型：专利
| 作者 | TADATOMO KAZUYUKI; WATABE SHINICHI; MAEDA SHIGEO; TOYAMA OSAMU |
| 专利号 | JP1992369874A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor material of light emitting element provided with distorted active layer |
| 英文摘要 | PURPOSE:To enable a light emitting element to be kept high in characteristics and to emit pure green light of high intensity. CONSTITUTION:A GaP clad layer 2, a GaInP single distorted quantum well type active layer 3, and a GaP clad layer 4 are successively grown on a GaP substrate The active layer 3 is controlled in mixed crystal ratio and thickness by the effect of the distorted quantum well (formation of quantum well level), whereby light emitted from the layer 3 can be controlled in wavelength. As a light emitting element of this design is very simple in structure, it can be simplified in manufacturing process, and as a result it can be improved in mass- productivity and profitability. As Al is not required, the element concerned is sharply improved in moisture resistance. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | TADATOMO KAZUYUKI,WATABE SHINICHI,MAEDA SHIGEO,et al. Semiconductor material of light emitting element provided with distorted active layer. JP1992369874A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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