Apparatus for liquid phase epitaxial growth
文献类型：专利
| 作者 | OONAKA SEIJI; OGURA MOTOTSUGU; HASE NOBUYASU |
| 专利号 | JP1983182222A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To prevent the convection of a liquid and the abnormal growth of a crystal by a method wherein, for instance, a grid made of the same material as that of a substrate support or one having higher thermal conductivity is provided in the liquid for growing the crystal. CONSTITUTION:A grid 100 is prepared using a preselected material in a crystalline liquid to make uniform the temperature distribution in the liquid. The grid 100 is constructed with bars made of the preselected material and arranged in parallel or crosswise in parallel, or in integrally. The grid 100 is thermally connected to a liquid support. When the liquid is cooled for growing the crystal, the liquid 7 is cooled from outside and simultaneously from inside via the grid. Accordingly, the temperature distribution in the liquid 7 is made uniform and, because no convection is generated, abnormal growth is prevented. Thus, a superior epitaxial crystal can be obtained. |
| 公开日期 | 1983-10-25 |
| 申请日期 | 1982-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44067]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OONAKA SEIJI,OGURA MOTOTSUGU,HASE NOBUYASU. Apparatus for liquid phase epitaxial growth. JP1983182222A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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