Visible light emitting device
文献类型：专利
| 作者 | NOZAKI CHIHARU; OBA YASUO; KOKUBU YOSHIHIRO; ITAYA KAZUHIKO |
| 专利号 | JP1989194379A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light emitting device |
| 英文摘要 | PURPOSE:To reduce and stabilize threshold as characteristics of InGaAlP semiconductor laser device by using II-group elements as p-type conductive dopant. CONSTITUTION:A double hetero junction consisting of an n-type InGaAlP clad layer 33, an InGaP active layer 34, and a p-type InGaAlP clad layer 35 is formed on an n-type GaAs substrate 32. When allowing the clad layer 35 to grow, two or more II-group elements are combined as dopants and are supplied simultaneously or alternately. It allows the part which was not physically possible with one element to be complemented and a p-type clad layer with a carrier concentration of 5X10cm or more and a flat carrier profile to be formed by the effect obtained by using two or more elements as dopants. |
| 公开日期 | 1989-08-04 |
| 申请日期 | 1988-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NOZAKI CHIHARU,OBA YASUO,KOKUBU YOSHIHIRO,et al. Visible light emitting device. JP1989194379A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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