Frequency modulation type semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MIYAUCHI NOBUYUKI; SAKII SHIGEKI; MORIMOTO TAIJI |
| 专利号 | JP1985242690A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Frequency modulation type semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a composite resonator type semiconductor laser element having a sufficiently wide frequency modulatory range and large percentage modulation by coating a resonant surface sharing one end surface of a resonator in a laser operating section with a dielectric film and setting the reflectivily of each resonator to proper values. CONSTITUTION:A frequency modulation type semiconductor laser element is constituted by a laser operating section 1 and a modulator section 2, and isolated electrically by an isolation groove 3. The laser operating section 1 is constituted by a resonant surface 5 on the front side and a resonant surface 4 on the back side. Resonant surfaces 4, 5, 6 are coated with protective films 7, 8, 9 for setting reflectivity. When driving currents I1 are flowed through the laser operating section 1, modulation currents I2 are flowed through the modulator section 2 and the current values are changed, photon density alters, an interference effect is generated by a resonator in the laser operating section 1, and the oscillation wavelength lambda of laser beams largely varies continuously. |
| 公开日期 | 1985-12-02 |
| 申请日期 | 1984-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44096]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MIYAUCHI NOBUYUKI,et al. Frequency modulation type semiconductor laser element. JP1985242690A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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