The heteroepitaxy efforts of semipolar and nonpolar GaN grown on foreigner substrates are reviewed and summarized in the past 20 years. With the demonstration of three representative semipolar GaN grown on sapphire, the capability to produce semipolar GaN with any orientation on sapphire is exhibited. Also, a unique growth technology called facet-engineered orientation-controlling growth to eliminate the stacking faults (SFs) in semipolar GaN is developed and SF-free (202 over bar 1) GaN grown on sapphire is presented, demonstrating the capability of producing device-quality, large-area semipolar GaN. InGaN green light-emitting diodes (LEDs) grown on the SF-free semipolar (202 over bar 1) GaN/sapphire templates are performed with much higher external quantum efficiency in comparison with the typical semipolar/nonpolar LEDs heteroepitaxially grown on foreigner substrates reported before.