Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods
文献类型：专利
| 作者 | WANG, TAK KUI; SU, CHUNG-YI |
| 专利号 | US20170063035A1 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods |
| 英文摘要 | A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die. |
| 公开日期 | 2017-03-02 |
| 申请日期 | 2015-08-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | WANG, TAK KUI,SU, CHUNG-YI. Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods. US20170063035A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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