Optically pumped vcsel with a multiplicity of active areas for intensity reduction in the Anti-resonant resonator
文献类型：专利
| 作者 | LINDBERG, HANS; ILLEK, STEFAN |
| 专利号 | WO2010017787A1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Optically pumped vcsel with a multiplicity of active areas for intensity reduction in the Anti-resonant resonator |
| 英文摘要 | In at least one embodiment of the surface-emitting semiconducting laser chip (1), this embodiment comprises a first layer sequence (2) which has a reflective effect for primary radiation (P) at a primary wavelength. In addition, the semiconductor laser chip (1) has a layer stack (4) with at least one active area (5), wherein the layer stack (4) is applied to a main face of the first layer sequence (2) and is designed to emit the primary radiation (P). The thickness (D) of the layer stack (4) is designed such that it is non-resonant at the primary wavelength. Only slight optical losses occur within the semiconductor laser chip (1) within a surface-emitting semiconductor laser chip (1) such as this. |
| 公开日期 | 2010-02-18 |
| 申请日期 | 2009-06-17 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | LINDBERG, HANS,ILLEK, STEFAN. Optically pumped vcsel with a multiplicity of active areas for intensity reduction in the Anti-resonant resonator. WO2010017787A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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