N-drive or p-drive vcsel array
文献类型：专利
| 作者 | YUEN, ALBERT T.; TAN, MICHAEL R.T.; LEI, CHUN |
| 专利号 | EP0935322A1 |
| 著作权人 | AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | N-drive or p-drive vcsel array |
| 英文摘要 | A VCSEL[160, 161] that is adapted to the fabrication of an array of VCSELs[160, 161]. A VCSEL array [160, 161]according to the present invention includes first and second VCSELs[160, 161] for generating light of a predetermined wavelength. Each VCSEL[160, 161] includes a bottom reflector[124] comprising a epitaxial layer of a semiconductor of a first conductivity type, a light generation region[128] and a top reflector[125] comprising a semiconductor of a second conductivity type. A bottom electrode[135] is electrically connected to the bottom reflector[124], and a top electrode[134] is electrically connected to the top reflector[125]. The bottom electrode[135] is grown on top of a buffer layer[122] having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector[124] on the buffer layer[122]. The buffer layer[122] may be grown on top of a substrate[120] or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector[124] of each of the VCSELs[160, 161] is in contact with the top of the buffer layer[122]. The first and second VCSELs[160, 161] are electrically isolated from one another by a trench[151] extending into the buffer layer[122]. The buffer layer[122] is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs[160, 161]. |
| 公开日期 | 1999-08-11 |
| 申请日期 | 1998-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION |
| 推荐引用方式 GB/T 7714 | YUEN, ALBERT T.,TAN, MICHAEL R.T.,LEI, CHUN. N-drive or p-drive vcsel array. EP0935322A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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