Light emitting semiconductor device having an electrical confinement barrier near the active region
文献类型：专利
| 作者 | JOHNSON, RALPH H.; BIARD, JAMES R.; GUENTER, JAMES K. |
| 发表日期 | 2011-04-05 |
| 专利号 | US7920612 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| 英文摘要 | Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device. |
| 公开日期 | 2011-04-05 |
| 申请日期 | 2006-07-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44315]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JOHNSON, RALPH H.,BIARD, JAMES R.,GUENTER, JAMES K.. Light emitting semiconductor device having an electrical confinement barrier near the active region. US7920612. 2011-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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