Semiconductor laser with wide side of tapered light gain region
文献类型：专利
| 作者 | TAMANUKI, TAKEMASA; YAMAZAKI, HIROYUKI |
| 发表日期 | 2000-06-13 |
| 专利号 | US6075801 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with wide side of tapered light gain region |
| 英文摘要 | The semiconductor laser disclosed includes a first conductivity type buffer layer, an active layer and a second conductivity type cladding layer which are sequentially positioned on a first conductivity type semiconductor substrate. The active layer has a laser gain region to which an electric current is injected. The laser gain region having a width varying linearly along a resonating direction is disposed between a high reflection film provided on a facet of a wide side of the laser gain region of the active layer and a low reflection film provided on a facet of a narrow side of the laser gain region of the active layer. The facet of the narrow side is for outputting oscillation beams of a high order mode. This provides a high electrical-to-optical conversion efficiency, and enables the outputting of a large output from a narrow light emission region. |
| 公开日期 | 2000-06-13 |
| 申请日期 | 1996-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44383]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | TAMANUKI, TAKEMASA,YAMAZAKI, HIROYUKI. Semiconductor laser with wide side of tapered light gain region. US6075801. 2000-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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