Intersubband semiconductor lasers with enhanced subband depopulation rate
文献类型：专利
| 作者 | BELENKY, GREGORY; DUTTA, MITRA; KISIN, MIKHAIL; LURYI, SERGE; STROSCIO, MICHAEL |
| 发表日期 | 2007-12-18 |
| 专利号 | US7310361 |
| 著作权人 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Intersubband semiconductor lasers with enhanced subband depopulation rate |
| 英文摘要 | Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering. |
| 公开日期 | 2007-12-18 |
| 申请日期 | 2004-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44385]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
| 推荐引用方式 GB/T 7714 | BELENKY, GREGORY,DUTTA, MITRA,KISIN, MIKHAIL,et al. Intersubband semiconductor lasers with enhanced subband depopulation rate. US7310361. 2007-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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