Quantum well semiconductor laser
文献类型：专利
| 作者 | ENDO, KENJI |
| 发表日期 | 1996-06-04 |
| 专利号 | US5524017 |
| 著作权人 | NEC ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum well semiconductor laser |
| 英文摘要 | In a quantum well semiconductor laser in which a stripe-like multilayered structure having a cladding layer of a first conductivity type, a quantum well active layer, and a cladding layer of a second conductivity type is formed on a semiconductor substrate or a semiconductor base layer, and multilayered structures identical to the stripe-like multilayered structure are formed along two sides of the stripe-like multilayered structure with grooves interposed in between, where each groove has a width smaller at portions near end face portions of a resonator than at a central portion thereof, and a quantum well layer of the quantum well active layer has a smaller thickness at the portions near the end face portions of the resonator than at the central portion thereof. |
| 公开日期 | 1996-06-04 |
| 申请日期 | 1995-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44391]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | ENDO, KENJI. Quantum well semiconductor laser. US5524017. 1996-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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