Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
文献类型：专利
| 作者 | EPLER, JOHN E.; PAOLI, THOMAS L. |
| 发表日期 | 1995-07-25 |
| 专利号 | US5436192 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth |
| 英文摘要 | The technique of induced evaporation enhancement is used in MOCVD to accomplish geometrical variations via atomic level removal or thinning or negative growth techniques in situ during or after epitaxial growth thereby varying optical and electrical properties of fabricated semiconductor structures during growth. Among the structures capable of being fabricated are three dimensional buried heterostructures, transparent window lasers, multiple wavelength array lasers, index guided and antiguided mechanisms and transparent optical waveguide structures for optical signal coupling in integrated circuitry. |
| 公开日期 | 1995-07-25 |
| 申请日期 | 1990-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44397]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | EPLER, JOHN E.,PAOLI, THOMAS L.. Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth. US5436192. 1995-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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