Semiconductor light emitting device with Group II-VI and III-V semiconductors
文献类型：专利
| 作者 | SHAKUDA, YUKIO |
| 发表日期 | 1995-12-19 |
| 专利号 | US5477063 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device with Group II-VI and III-V semiconductors |
| 英文摘要 | In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer. |
| 公开日期 | 1995-12-19 |
| 申请日期 | 1994-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHAKUDA, YUKIO. Semiconductor light emitting device with Group II-VI and III-V semiconductors. US5477063. 1995-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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