Method of making a semiconductor laser device
文献类型：专利
| 作者 | HATTORI, RYO |
| 发表日期 | 1993-01-12 |
| 专利号 | US5179040 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a semiconductor laser device |
| 英文摘要 | A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed. |
| 公开日期 | 1993-01-12 |
| 申请日期 | 1991-09-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HATTORI, RYO. Method of making a semiconductor laser device. US5179040. 1993-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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