Group III nitride compound semiconductor laser diode and method for producing same
文献类型：专利
| 作者 | KATO, HISAKI; KOIDE, NORIKATSU; KOIKE, MASAYOSHI; AKASAKI, ISAMU; AMANO, HIROSHI |
| 发表日期 | 1997-02-18 |
| 专利号 | US5604763 |
| 著作权人 | WHEATON INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor laser diode and method for producing same |
| 英文摘要 | An improved laser diode is made of a gallium nitride compound semiconductor ((AlxGa1-x)yIn1-yN; 0 (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity. |
| 公开日期 | 1997-02-18 |
| 申请日期 | 1995-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44407]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WHEATON INC. |
| 推荐引用方式 GB/T 7714 | KATO, HISAKI,KOIDE, NORIKATSU,KOIKE, MASAYOSHI,et al. Group III nitride compound semiconductor laser diode and method for producing same. US5604763. 1997-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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