半導体光集積素子
文献类型：专利
| 作者 | 村田 茂 |
| 发表日期 | 1997-08-22 |
| 专利号 | JP2687464B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体光集積素子 |
| 英文摘要 | PURPOSE:To easily manufacture the title element whose variation in a wavelength is small even during a modulation and whose structure is simple by a method wherein a distributed Bragg reflector(DBR) region having a diffraction grating is formed in a semiconductor laser, an effective refractive index of the DBR region can be controlled electrically and an optical modulator is formed to be adjacent to the DBR region. CONSTITUTION:An optical modulator 200 is formed to be adjacent to a DBR region 130 of a DBR laser 100; a layer structure of the optical modulator 200 is identical to a layer structure of an active region 110 of the DBR laser 100. In the DBR laser 100, an oscillation wavelength is decided mainly by a cycle of a diffraction grating 116 of the DBR region 130; accordingly, when an injection current to the optical modulator 200 is modulated and a laser beam is intensity-modulated, a laser is hardly affected even when a reflection factor of a reflectionless coating film 300 is made a little large. A strict reflectionless coating required for an optical integrated element of a DFB laser and the optical modulation is not required. Thereby, it is possible to easily manufacture the optical integrated element whose variation in a wavelength during a modulation is small and whose structure is simple. |
| 公开日期 | 1997-12-08 |
| 申请日期 | 1988-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 村田 茂. 半導体光集積素子. JP2687464B2. 1997-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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