Vertical-cavity surface-emitting diode laser
文献类型：专利
| 作者 | BOTEZ, DAN; MAWST, LUKE J.; ROTH, THOMAS J.; ZINKIEWICZ, LAWRENCE M. |
| 发表日期 | 1991-08-06 |
| 专利号 | US5038356 |
| 著作权人 | TRW INC., A CORP. OF OH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical-cavity surface-emitting diode laser |
| 英文摘要 | A semiconductor diode laser device, and a related method for its fabrication, the laser being of the type from which light is emitted in a direction perpendicular to planar layers forming the device. The laser includes an active layer and cladding layers formed on a supporting substrate, and a highly reflective semiconductor stack reflector formed on one of the cladding layers. The semiconductor stack reflector may be placed in contact with a heat sink and performs the multiple functions of electrical current conduction, heat removal and light reflection. A current confinement layer is formed laterally surrounding the semiconductor stack reflector, to provide one element of a back-biased junction that confines the current to the reflector region. A dielectric stack reflector is formed in a well in the substrate, and provides for light emission from the device. Operation of the device at high powers and efficiencies, even in continous-wave (CW) mode, is made possible by positioning the active layer in close proximity to the heat sink, and by the effectiveness of the current confinement layer surrounding the semiconductor stack reflector. |
| 公开日期 | 1991-08-06 |
| 申请日期 | 1989-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TRW INC., A CORP. OF OH |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,MAWST, LUKE J.,ROTH, THOMAS J.,et al. Vertical-cavity surface-emitting diode laser. US5038356. 1991-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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