Quantum cascade semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO, JUN-ICHI; KATO, TAKASHI; INADA, HIROSHI; MURATA, MICHIO |
| 发表日期 | 2014-08-12 |
| 专利号 | US8804785 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum cascade semiconductor laser |
| 英文摘要 | A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor. |
| 公开日期 | 2014-08-12 |
| 申请日期 | 2013-05-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, JUN-ICHI,KATO, TAKASHI,INADA, HIROSHI,et al. Quantum cascade semiconductor laser. US8804785. 2014-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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