Visible double heterostructure-semiconductor laser
文献类型：专利
| 作者 | YANO, SEIKI; YAMAMOTO, SABURO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI |
| 发表日期 | 1987-12-08 |
| 专利号 | US4712219 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Visible double heterostructure-semiconductor laser |
| 英文摘要 | A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers. |
| 公开日期 | 1987-12-08 |
| 申请日期 | 1985-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44449]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YANO, SEIKI,YAMAMOTO, SABURO,TAKIGUCHI, HARUHISA,et al. Visible double heterostructure-semiconductor laser. US4712219. 1987-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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