Monolithic semiconductor laser
文献类型：专利
| 作者 | TANABE, TETSUHIRO |
| 发表日期 | 2011-06-21 |
| 专利号 | US7965753 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic semiconductor laser |
| 英文摘要 | An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation. |
| 公开日期 | 2011-06-21 |
| 申请日期 | 2006-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | TANABE, TETSUHIRO. Monolithic semiconductor laser. US7965753. 2011-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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