Semiconductor laser with a controllable transmittance layer
文献类型：专利
| 作者 | OSHIMA, MASAAKI; HIRAYAMA, NORIYUKI; HASE, NOBUYASU |
| 发表日期 | 1988-07-26 |
| 专利号 | US4760578 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with a controllable transmittance layer |
| 英文摘要 | In a semiconductor laser, an active layer and a pair of cladding layers sandwiching therebetween the active layer are provided to be parallel to the plane of the substrate to form a light waveguide passage, and light from the light waveguide passage is guided toward the substrate by reflecting the same at reflecting layers formed of dielectric with the active layer and the cladding layers being cut to have slopes inclined at approximately 45 degrees with respect to the plane of the substrate. A multiquantum well layer is provided so as to change the transmittance thereof by the change of applied electric field providing extremely high speed modulation. One or more through-holes may be made in the substrate so as to derive output light therethrough. One or more of the through-holes may be filled with a reflection layer so as to selectively reflect particular wavelength light, and thus by using a plurality of such laser chips, oscillation at different wavelengths is possible. |
| 公开日期 | 1988-07-26 |
| 申请日期 | 1986-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44463]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OSHIMA, MASAAKI,HIRAYAMA, NORIYUKI,HASE, NOBUYASU. Semiconductor laser with a controllable transmittance layer. US4760578. 1988-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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