Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
文献类型：专利
| 作者 | EBERT, CHRIS W.; GRAY, MARY L.; GRIM-BOGDAN, KAREN A.; SEILER, JOSEPH BRIAN; TZAFARAS, NIKOLAOS |
| 发表日期 | 2000-12-12 |
| 专利号 | US6159758 |
| 著作权人 | LUCENT TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate |
| 英文摘要 | A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group. |
| 公开日期 | 2000-12-12 |
| 申请日期 | 1999-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | EBERT, CHRIS W.,GRAY, MARY L.,GRIM-BOGDAN, KAREN A.,et al. Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate. US6159758. 2000-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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