中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Variable-wavelength semiconductor laser device controlled by strength of electric field applied to wavelength selection element

文献类型:专利

作者OKAZAKI, YOJI
发表日期2003-11-11
专利号US6647029
著作权人FUJIFILM CORPORATION
国家美国
文献子类授权发明
其他题名Variable-wavelength semiconductor laser device controlled by strength of electric field applied to wavelength selection element
英文摘要A variable-wavelength semiconductor laser device containing a tapered-stripe semiconductor laser amplifier and a wavelength selection unit. Light emitted from a back end surface of the tapered-stripe semiconductor laser amplifier is incident on the wavelength selection unit. The wavelength selection unit selects a portion of the light having a specific wavelength, and returns the selected portion to the tapered-stripe semiconductor laser amplifier. The tapered-stripe semiconductor laser amplifier amplifies the returned portion of the light to emit the amplified light from a front-end surface of the tapered-stripe semiconductor laser amplifier. The wavelength selection unit is constructed so that the specific wavelength can be changed according to strength of an electric field applied to the wavelength selection unit. An electric field applying unit is provided for applying the electric field to the wavelength selection unit. The wavelength selection unit may contain a fiber grating, a birefringent filter, or an optical waveguide element having therein a reflection grating. In this case, the specific wavelength selected by the wavelength selection unit can be changed by changing a refraction index and/or an effective pitch of the grating, which can be changed by adjusting the strength of the electric field.
公开日期2003-11-11
申请日期2000-03-07
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/44467]  
专题半导体激光器专利数据库
作者单位FUJIFILM CORPORATION
推荐引用方式
GB/T 7714
OKAZAKI, YOJI. Variable-wavelength semiconductor laser device controlled by strength of electric field applied to wavelength selection element. US6647029. 2003-11-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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