Semiconductor light-emitting device and method of fabricating the same
文献类型：专利
| 作者 | SHAKUDA, YUKIO |
| 发表日期 | 2000-06-06 |
| 专利号 | US6072819 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device and method of fabricating the same |
| 英文摘要 | A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate includes a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type (an n-type cladding layer) and a semiconductor layer of a second conductivity type (a p-type cladding layer); a current blocking layer of the first conductivity type, which is formed within a semiconductor layer of the second conductivity type and in close proximity to the light-emitting layer forming portion, and a portion of which is removed in a region where a current flow, and electrodes connected to the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, respectively. In a semiconductor light-emitting device using GaN based compound semiconductors, this structure allows the current blocking layer for defining a current injection region to be formed in close proximity to the light-emitting layer, thus reducing leakage current into regions outside a pattern. |
| 公开日期 | 2000-06-06 |
| 申请日期 | 1997-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHAKUDA, YUKIO. Semiconductor light-emitting device and method of fabricating the same. US6072819. 2000-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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