中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same

文献类型:专利

作者CHEN, NONG; WATANABE, YOSHIAKI; TAKEI, KOYOSHI; CHIKUMA, KIYOFUMI
发表日期1999-11-09
专利号US5982804
著作权人PIONEER ELECTRONIC CORPORATION
国家美国
文献子类授权发明
其他题名Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same
英文摘要There is provided a method of manufacturing a DFB semiconductor laser in which a laser substrate having a cladding layer which is a material for a ridge stripe stacked on an active is formed. The cladding layer as a material for a ridge stripe is etched to form a ridge stripe having flat portions on both sides thereof and a flat top portion protruding therefrom. A protective film and a resist layer are formed to cover the flat portions on both sides and the flat upper surface. A latent image of a grating having a periodic structure is formed in the direction in which the ridge stripe extends is formed on the resist layer. The resist layer is developed and the flat portions on both sides are etched to form a grating on both lateral portions and to remove the protective film. An electrode is formed on the flat top portion, the interface between the ridge strip and the electrode being a smooth surface.
公开日期1999-11-09
申请日期1997-07-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/44474]  
专题半导体激光器专利数据库
作者单位PIONEER ELECTRONIC CORPORATION
推荐引用方式
GB/T 7714
CHEN, NONG,WATANABE, YOSHIAKI,TAKEI, KOYOSHI,et al. Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same. US5982804. 1999-11-09.

入库方式: OAI收割

来源:西安光学精密机械研究所

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