Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
文献类型：专利
| 作者 | CHAKRABARTI, UTPAL KUMAR; HOBSON, WILLIAM SCOTT; REN, FAN; SCHNOES, MELINDA LAMONT |
| 发表日期 | 1997-09-16 |
| 专利号 | US5668049 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur |
| 英文摘要 | In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H2S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power. |
| 公开日期 | 1997-09-16 |
| 申请日期 | 1996-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | CHAKRABARTI, UTPAL KUMAR,HOBSON, WILLIAM SCOTT,REN, FAN,et al. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur. US5668049. 1997-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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