Nitride semiconductor light emitting element and manufacturing method thereof
文献类型：专利
| 作者 | OHNO, TOMOKI; ITO, SHIGETOSHI |
| 发表日期 | 2005-05-24 |
| 专利号 | US6897484 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light emitting element and manufacturing method thereof |
| 英文摘要 | The object of the present invention is to lower the oscillation threshold value and to improve the yield by improving the luminous efficiency in the central wavelength of a laser. To achieve the object, the nitride semiconductor light emitting element of the present invention includes a substrate, a lower clad layer formed of a nitride semiconductor containing Al and Ga formed thereon, a lower guide layer formed of a nitride semiconductor mainly containing In and Ga formed thereon, and an active layer including a nitride semiconductor mainly containing In and Ga formed thereon. The lower guide layer has a first layer and a second layer higher in In content than the first layer, successively stacked from the active layer side. |
| 公开日期 | 2005-05-24 |
| 申请日期 | 2003-09-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OHNO, TOMOKI,ITO, SHIGETOSHI. Nitride semiconductor light emitting element and manufacturing method thereof. US6897484. 2005-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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