Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser
文献类型：专利
| 作者 | SEKO, YASUJI; SAKAMOTO, AKIRA |
| 发表日期 | 2003-07-22 |
| 专利号 | US6597017 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser |
| 英文摘要 | Provided is a semiconductor device that has pseudo lattice matched layers with good crystallinity, formed with lattice mismatched materials. Tensile-strained n-type Al0.5Ga0.5N layers (lower side) and compressive-strained n-type Ga0.9In0.1N layers (upper side) are grown on a GaN crystal layer substrate in 16.5 periods to form an n-type DBR mirror; an undoped GaN spacer layer and an active region are grown on the n-type DBR mirror; and an undoped a GaN spacer layer is grown on the active region. Further, tensile-strained p-type Al0.5Ga0.5N layers (lower side) and compressive-strained p-type Ga0.9In0.1N layers (upper side) are grown on the spacer layer in 12 periods to form a p-type DBR mirror and eventually complete a surface emitting semiconductor laser. |
| 公开日期 | 2003-07-22 |
| 申请日期 | 2000-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44484]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEKO, YASUJI,SAKAMOTO, AKIRA. Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser. US6597017. 2003-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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