Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same
文献类型：专利
| 作者 | HATA, TOSHIO |
| 发表日期 | 2000-08-29 |
| 专利号 | US6111275 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same |
| 英文摘要 | A gallium nitride group compound semiconductor light-emitting device comprises a substrate and a layered structure provided on the substrate. The layered structure includes: an active layer; an upper cladding layer and a lower cladding layer which is located closer to the substrate than the upper cladding layer, the active layer interposed between the cladding layers; an internal current constricting layer having an opening for constricting a current within a selected region of the active layer, the internal current constricting layer being provided on the upper cladding layer; a surface protecting layer for covering the internal current constricting layer and an exposed surface of the upper cladding layer in the opening of the internal current constricting layer; and a regrowth layer provided on the surface protecting layer. The surface protecting layer serves as a protecting layer for the upper cladding layer and the internal current constricting layer in a step of forming the regrowth layer. |
| 公开日期 | 2000-08-29 |
| 申请日期 | 1997-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HATA, TOSHIO. Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same. US6111275. 2000-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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