Multi quantum well grinsch detector
文献类型：专利
| 作者 | RAZEGHI, MANIJEH |
| 发表日期 | 2002-10-01 |
| 专利号 | US6459096 |
| 著作权人 | MP TECHNOLOGIES LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi quantum well grinsch detector |
| 英文摘要 | A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0->1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device. |
| 公开日期 | 2002-10-01 |
| 申请日期 | 2000-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44486]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MP TECHNOLOGIES LLC |
| 推荐引用方式 GB/T 7714 | RAZEGHI, MANIJEH. Multi quantum well grinsch detector. US6459096. 2002-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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