Compound semiconductor device based on gallium nitride
文献类型：专利
| 作者 | KANO, TAKASHI |
| 发表日期 | 2002-05-14 |
| 专利号 | US6388275 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor device based on gallium nitride |
| 英文摘要 | A compound semiconductor device based on gallium nitride which can have a thick gallium nitride semiconductor layer serving to prevent cracks or defects attributable to a strain caused by a difference in lattice constant or coefficient of thermal expansion. Between a contact layer 4 consisting of a film of n-type GaN and a clad layer 5 consisting of a film of a n-type AlyGa1-yN is interposed a crack-preventive buffer layer 5 having both of the compositions of the two films. |
| 公开日期 | 2002-05-14 |
| 申请日期 | 2000-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | KANO, TAKASHI. Compound semiconductor device based on gallium nitride. US6388275. 2002-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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