Type II quantum well optoelectronic devices
文献类型：专利
| 作者 | TANSU, NELSON; MAWST, LUKE J. |
| 发表日期 | 2004-09-14 |
| 专利号 | US6791104 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Type II quantum well optoelectronic devices |
| 英文摘要 | Semiconductor optoelectronic devices such as diode lasers are formed on GaAs with an active region with a GaAsN electron quantum well layer and a GaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers. |
| 公开日期 | 2004-09-14 |
| 申请日期 | 2002-09-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | TANSU, NELSON,MAWST, LUKE J.. Type II quantum well optoelectronic devices. US6791104. 2004-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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