Buried stripe type semiconductor laser device
文献类型：专利
| 作者 | OKUMURA, TOSHIYUKI; INOGUCHI, KAZUHIKO; KONUSHI, FUMIHIRO; TAKIGUCHI, HARUHISA |
| 发表日期 | 1994-08-02 |
| 专利号 | US5335241 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried stripe type semiconductor laser device |
| 英文摘要 | A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained. |
| 公开日期 | 1994-08-02 |
| 申请日期 | 1991-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44502]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OKUMURA, TOSHIYUKI,INOGUCHI, KAZUHIKO,KONUSHI, FUMIHIRO,et al. Buried stripe type semiconductor laser device. US5335241. 1994-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。