Substrate holder for MOCVD
文献类型：专利
| 作者 | NOBUAKI, , KANENO; HIROTAKA, , KIZUKI; MASAYOSHI, , TAKEMI; KENZO, , MORI |
| 发表日期 | 1997-09-24 |
| 专利号 | GB2277748B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Substrate holder for MOCVD |
| 英文摘要 | A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body 1, a GaAs polycrystalline film 2 with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film 3 grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 mu m or more at a temperature higher than the epitaxial growth temperature of 575 DEG C.; During the MOCVD process, the emissivity of the molybdenum substrate holder is settled at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of the PH3 gas on the substrate holder is settled at a value near the decomposition ratio on the wafer, whereby the variation of the incorporation ratio of P atoms in the InGaAsP mixed crystal, i.e., the variation of the composition of the InGaAsP mixed crystal, is reduced and the run-to-run variation of the composition of the mixed crystal is reduced. In further embodiments an InGaAsP, at a temperature higher than 575 DEG C, and InP, at 400 - 550 DEG C, may be deposited on the molybdenum. The MOCVD apparatus includes a high-speed rotatable susceptor 200b; a substrate holder 300b disposed on the front surface of the susceptor; means for heating said susceptor; an inlet for supplying source gases; and a plurality of rotatable wafer trays 600a disposed on the front surface of the susceptor via the substrate holder, each wafer tray having a plurality of wings 600a1 to which a gas flow is applied. |
| 公开日期 | 1997-09-24 |
| 申请日期 | 1994-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NOBUAKI, , KANENO,HIROTAKA, , KIZUKI,MASAYOSHI, , TAKEMI,et al. Substrate holder for MOCVD. GB2277748B. 1997-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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