Edge emitting semiconductor laser comprising a waveguide
文献类型：专利
| 作者 | SCHMID, WOLFGANG |
| 发表日期 | 2010-10-12 |
| 专利号 | US7813399 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Edge emitting semiconductor laser comprising a waveguide |
| 英文摘要 | In an edge emitting semiconductor laser comprising an active layer (3) that generates laser radiation (13) and is embedded into a first waveguide layer (1), wherein the first waveguide layer (1) is arranged between a first cladding layer (4) and a second cladding layer (5) and is delimited by side facets (9) of the semiconductor laser in a lateral direction, a second waveguide layer (2), into which no active layer is embedded, adjoins the second cladding layer (5), the second waveguide layer (2) being optically coupled to the first waveguide layer (1) at least in partial regions (10, 11), and a third cladding layer (6) is arranged at a side of the second waveguide layer (2) that is remote from the first waveguide layer (1). |
| 公开日期 | 2010-10-12 |
| 申请日期 | 2008-09-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | SCHMID, WOLFGANG. Edge emitting semiconductor laser comprising a waveguide. US7813399. 2010-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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