Surface emission type semiconductor laser
文献类型：专利
| 作者 | MORI, KATSUMI; ASAKA, TATSUYA; IWANO, HIDEAKI; KONDO, TAKAYUKI |
| 发表日期 | 1995-04-04 |
| 专利号 | US5404369 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emission type semiconductor laser |
| 英文摘要 | A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. "Lattice mismatch ratio" between the II-VI group compound semiconductor epitaxial layer and the column-like portions is no more than 0.2%, or more preferably no more than 0.16%. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove. |
| 公开日期 | 1995-04-04 |
| 申请日期 | 1994-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44515]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | MORI, KATSUMI,ASAKA, TATSUYA,IWANO, HIDEAKI,et al. Surface emission type semiconductor laser. US5404369. 1995-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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