Quantum well laser with a composition-graded interface at the quantum well
文献类型：专利
| 作者 | HE, XIAOQUANG; SRINIVASAN, SWAMINATHAN |
| 发表日期 | 2000-07-18 |
| 专利号 | US6091752 |
| 著作权人 | OPTO POWER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum well laser with a composition-graded interface at the quantum well |
| 英文摘要 | Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner. |
| 公开日期 | 2000-07-18 |
| 申请日期 | 1998-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44516]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTO POWER CORPORATION |
| 推荐引用方式 GB/T 7714 | HE, XIAOQUANG,SRINIVASAN, SWAMINATHAN. Quantum well laser with a composition-graded interface at the quantum well. US6091752. 2000-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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