Epitaxial-side-down mounted high-power semiconductor lasers
文献类型：专利
| 作者 | KIM, CHUL SOO; BEWLEY, WILLIAM W.; KIM, MIJIN; MERRITT, CHARLES D.; CANEDY, CHADWICK LAWRENCE; ABELL, JOSHUA; VURGAFTMAN, IGOR; MEYER, JERRY R. |
| 发表日期 | 2014-11-04 |
| 专利号 | US8879593 |
| 著作权人 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial-side-down mounted high-power semiconductor lasers |
| 英文摘要 | A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder. |
| 公开日期 | 2014-11-04 |
| 申请日期 | 2013-03-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44519]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | KIM, CHUL SOO,BEWLEY, WILLIAM W.,KIM, MIJIN,et al. Epitaxial-side-down mounted high-power semiconductor lasers. US8879593. 2014-11-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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