Multi-quantum well lasers with selectively doped barriers
文献类型：专利
| 作者 | ANSELM, KLAUS ALEXANDER; BAILLARGEON, JAMES NELSON; CHO, ALFRED YI |
| 发表日期 | 2001-05-29 |
| 专利号 | US6240114 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi-quantum well lasers with selectively doped barriers |
| 英文摘要 | An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K. |
| 公开日期 | 2001-05-29 |
| 申请日期 | 1998-08-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | ANSELM, KLAUS ALEXANDER,BAILLARGEON, JAMES NELSON,CHO, ALFRED YI. Multi-quantum well lasers with selectively doped barriers. US6240114. 2001-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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