Semiconductor laser with blocking layer
文献类型：专利
| 作者 | MORRISON, CHARLES B.; FIGUEROA, LUIS; BURGHARD, ANDRE |
| 发表日期 | 1986-12-30 |
| 专利号 | US4633477 |
| 著作权人 | NORTHROP GRUMMAN CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with blocking layer |
| 英文摘要 | A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. The disclosed embodiments have twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced. |
| 公开日期 | 1986-12-30 |
| 申请日期 | 1984-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44528]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NORTHROP GRUMMAN CORPORATION |
| 推荐引用方式 GB/T 7714 | MORRISON, CHARLES B.,FIGUEROA, LUIS,BURGHARD, ANDRE. Semiconductor laser with blocking layer. US4633477. 1986-12-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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