Semiconductor laser with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same
文献类型：专利
| 作者 | SEIICHI, MIYAZAWA |
| 发表日期 | 2002-09-11 |
| 专利号 | EP0834972B1 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same |
| 英文摘要 | An optical semiconductor device includes a substrate and an active region formed on the substrate. The active region includes a plurality of quantum well layers containing at least one tensile-strained well layer, and the plurality of quantum well layers include a plurality of quantum well layers whose band gaps are different from each other. Such an active region makes it possible to expand a wavelength range over which TE-mode and TM-mode gains balance with each other or are approximately equal to each other. |
| 公开日期 | 2002-09-11 |
| 申请日期 | 1997-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SEIICHI, MIYAZAWA. Semiconductor laser with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same. EP0834972B1. 2002-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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