Quantum thin line producing method and semiconductor device employing the quantum thin line
文献类型：专利
| 作者 | FUKUSHIMA, YASUMORI; ASHIDA, TSUTOMU |
| 发表日期 | 2002-02-26 |
| 专利号 | US6351007 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum thin line producing method and semiconductor device employing the quantum thin line |
| 英文摘要 | There is provided a quantum thin line producing method capable of forming a quantum thin line that has good surface flatness of silicon even after formation of quantum thin line and a complete electron confining region with good controllability as well as a semiconductor device employing the quantum thin line. A region of a nitride film 3 which covers a semiconductor substrate 1 on which a stepped portion 2 is formed is etched back with masking, consequently exposing an upper portion of a semiconductor substrate Next, an oxide film 5 is formed by oxidizing the exposed portion of the upper portion of the semiconductor substrate 1, and a linear protruding portion 6 is formed on the semiconductor substrate along a side surface of the nitride film 3. Next, the oxide film 5 on the protruding portion 6 is partially etched to expose a tip of the protruding portion 6. Next, a thin line portion 7 is made to epitaxially grow on the exposed portion at the tip of the protruding portion 6. Then, after removing the nitride film 3 and the oxide film 5, there is formed a quantum thin line 7a that is insulated and isolated from the semiconductor substrate 1 by an oxide film 5A formed through oxidation of the semiconductor substrate |
| 公开日期 | 2002-02-26 |
| 申请日期 | 2000-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44537]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUKUSHIMA, YASUMORI,ASHIDA, TSUTOMU. Quantum thin line producing method and semiconductor device employing the quantum thin line. US6351007. 2002-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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