Laser diode with high indium active layer and lattice matched cladding layer
文献类型：专利
| 作者 | BOUR, DAVID P.; CHUA, CHRISTOPHER L.; JOHNSON, NOBLE M.; YANG, ZHIHONG |
| 发表日期 | 2011-08-16 |
| 专利号 | US8000366 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode with high indium active layer and lattice matched cladding layer |
| 英文摘要 | A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed. |
| 公开日期 | 2011-08-16 |
| 申请日期 | 2008-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44538]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,CHUA, CHRISTOPHER L.,JOHNSON, NOBLE M.,et al. Laser diode with high indium active layer and lattice matched cladding layer. US8000366. 2011-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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