Semiconductor laser diode with integrated heating region
文献类型：专利
| 作者 | ZHENG, JUN; ANSELM, KLAUS ALEXANDER; ZHANG, HUANLIN; CHANG, HUNG-LUN |
| 发表日期 | 2016-05-17 |
| 专利号 | US9343870 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode with integrated heating region |
| 英文摘要 | A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently. |
| 公开日期 | 2016-05-17 |
| 申请日期 | 2014-09-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44541]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | ZHENG, JUN,ANSELM, KLAUS ALEXANDER,ZHANG, HUANLIN,et al. Semiconductor laser diode with integrated heating region. US9343870. 2016-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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