Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
文献类型：专利
| 作者 | KISHIMOTO, KATSUHIKO; FUJISHIRO, YOSHIE |
| 发表日期 | 2009-07-07 |
| 专利号 | US7558307 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
| 英文摘要 | In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 0 with respect to the wavelength band of the emission laser light. |
| 公开日期 | 2009-07-07 |
| 申请日期 | 2005-02-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44549]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KISHIMOTO, KATSUHIKO,FUJISHIRO, YOSHIE. Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system. US7558307. 2009-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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