Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers
文献类型：专利
| 作者 | TAKAMORI, AKIRA; IDOTA, KEN; UCHIYAMA, KIYOSHI; NAKAJIMA, MASATO |
| 发表日期 | 1993-03-16 |
| 专利号 | US5194400 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers |
| 英文摘要 | A method for fabricating an AlGaInP-based visible light laser device by molecular beam epitaxy is described. In this method, a upper clad layer of (AlxGa1-x)yIn1-yP wherein x and y are, respectively, in the ranges of from 0.5 to 1 and from 0.47 to 0.53 is covered with a protective layer serving also as an etching prevenive layer so that a grooved-type structure using the (AlxGa1-x)yIn1-yP clad layer can be fabricated without involving degradation of the clad layer by contamination with oxygen, nitrogen and the like. |
| 公开日期 | 1993-03-16 |
| 申请日期 | 1991-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44558]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKAMORI, AKIRA,IDOTA, KEN,UCHIYAMA, KIYOSHI,et al. Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers. US5194400. 1993-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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