Nitride-base semiconductor laser device
文献类型：专利
| 作者 | NOMURA, YASUHIKO; INOUE, DAIJIRO; HATA, MASAYUKI; KANO, TAKASHI |
| 发表日期 | 2006-08-08 |
| 专利号 | US7088755 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-base semiconductor laser device |
| 英文摘要 | A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers. |
| 公开日期 | 2006-08-08 |
| 申请日期 | 2003-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44564]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | NOMURA, YASUHIKO,INOUE, DAIJIRO,HATA, MASAYUKI,et al. Nitride-base semiconductor laser device. US7088755. 2006-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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