Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
文献类型：专利
| 作者 | UETA, YOSHIHIRO; TAKAKURA, TERUYOSHI; KAMIKAWA, TAKESHI; TSUDA, YUHZOH; ITO, SHIGETOSHI; YUASA, TAKAYUKI; TANEYA, MOTOTAKA; MOTOKI, KENSAKU |
| 发表日期 | 2008-12-09 |
| 专利号 | US7462882 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
| 英文摘要 | A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life. |
| 公开日期 | 2008-12-09 |
| 申请日期 | 2004-04-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44569]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | UETA, YOSHIHIRO,TAKAKURA, TERUYOSHI,KAMIKAWA, TAKESHI,et al. Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus. US7462882. 2008-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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