Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
文献类型：专利
| 作者 | MUKAIYAMA, AKIHIRO; FUKUNAGA, TOSHIAKI; KUNIYASU, TOSHIAKI |
| 发表日期 | 2005-05-31 |
| 专利号 | US6901100 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection |
| 英文摘要 | In a semiconductor laser device: a p-type AlzGa1-zAs cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission. |
| 公开日期 | 2005-05-31 |
| 申请日期 | 2002-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44571]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | MUKAIYAMA, AKIHIRO,FUKUNAGA, TOSHIAKI,KUNIYASU, TOSHIAKI. Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection. US6901100. 2005-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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